| PART |
Description |
Maker |
| GM9012 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA.
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| KTA1505 |
Excellent hFE linearity
|
MAKO SEMICONDUCTOR CO.,...
|
| 2SC3617 |
World standard miniature package. High hFE hFE=800 to 1600.
|
TY Semiconductor Co., Ltd
|
| 2SC4548 |
High Breakdown Voltage Adoption of MBIT Process Excellent hFE Linearlity.
|
TY Semiconductor Co., Ltd
|
| 2SB1215 |
Low collector-to-emitter saturation voltage. Excllent linearity of hFE. Fast switching time.
|
TY Semiconductor Co., L...
|
| 2SA1832 |
High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) High hFE: hFE=70 to 400
|
TY Semiconductor Co., Ltd
|
| 2SC945 |
Collector current up to 150mA High hFE linearity Collector to base voltage VCBO 60 V
|
TY Semiconductor Co., L...
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| BCX55 BCX56 BCX55-16 BCX54 BCX54-10 BCX54-16 BCX56 |
General Purpose Transistors - SOT89; VCEO=60 V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=40...250
General Purpose Transistors - SOT89; VCEO=80V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=60V; hFE=63...160
General Purpose Transistors - SOT89; VCEO=45V; hFE=63...160
NPN Silicon AF Transistors NPN AF硅晶体管
NPN Silicon AF Transistors
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BCX68 BCX68-25 BCX68-10 BCX68-16 |
General Purpose Transistors - SOT89; VCEO=20V; hFE=100...250
General Purpose Transistors - SOT89; VCEO=20 V; hFE=85...160
General Purpose Transistors - SOT89; VCEO=20V; hFE=160...375
NPN Silicon AF Transistors
|
INFINEON[Infineon Technologies AG]
|
| CSC2001 CSA952 CSA952K CSA952L CSA952M CSA9529AW C |
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 180 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 135 - 270 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 200 - 400 hFE
0.600W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.700A Ic, 90 - 400 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR 进步党平面外延硅晶体
|
Continental Device India Limited
CDIL
Continental Device India, Ltd.
|
